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| 对MIS结构热弛豫时间的分析计算 |
| Analysis And Calculation of the Thermal Relaxation Time for MIS Structure |
| 投稿时间：2022-03-07 修订日期：2024-02-26 |
| DOI： |
| 中文关键词: 半导体物理 MIS结构 热弛豫时间 |
| 英文关键词: semiconductor physics MIS structure deeply-depletion strong-inversion thermal relaxation time |
| 基金项目:中国博士后科学基金(项目编号：2020M683286) 四川省科技计划(项目编号：2021YJ0373) 上海交通大学?西安电子科技大学教育部重点实验室联合基金(项目编号：LHJJ/2021-01) 广东省基础与应用基础研究基金(项目编号：2021A1515011412) 电子科技大学课程思政示范课建设项目(项目编号：2021KCSZ0127) |
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| 摘要点击次数: 728 |
| 全文下载次数: 795 |
| 中文摘要: |
| 对MIS（金属?绝缘层?半导体）结构从深耗尽过渡至强反型状态所需的热弛豫时间进行了研究。通过建立较教科书更精确的模型，对热弛豫时间τth与深耗尽时耗尽区宽度xd0、强反型时耗尽区最大宽度xdm、耗尽区内少子净产生率G和掺杂浓度ND等关键物理量之间的关联进行了推导，并基于MEDICI平台对推导结果完成了仿真验证，从而加强了学生对半导体表面效应的理解，也利于他们未来从事半导体方面的创新研究。 |
| 英文摘要: |
| The thermal relaxation time (τth) for a metal-insulation-semiconductor (MIS) structure transferred from the deeply-depleted state to strong-inversion state is analyzed. By establishing a more accurate model than that in textbooks and performing the corresponding mathematical derivation, the relationship among the τth, the depleted region width (xd0), the maximum depleted region width (xdm), the net generation rate of minor carriers (G) and the doping concentration (ND) is revealed. Furthermore, the theoretical analyses are verified by the simulation based on MEDICI, which is beneficial for the students to have systematic comprehension on the semiconductor surface effects and also helps them to engage in innovative research on semiconductors in the future. |
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