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开关损耗与温升的PLECS仿真分析 |
Simulation Analysis of Switching Loss and Temperature Rise using PLECS |
投稿时间:2021-04-26 修订日期:2022-09-20 |
DOI: |
中文关键词: PLECS 碳化硅MOSFET,逆导型IGBT 热特性 仿真教学 |
英文关键词: PLECS SiC MOSFET Reverse conduction IGBT (RC-IGBT) Thermal characteristic Simulation teaching |
基金项目:高校教学研究项目 |
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中文摘要: |
借助仿真分析工具可验证理论分析的正确性,还能为实验研究过程提供有价值的经验。为培养知识全面型人才,电气工程专业学生应学会使用电磁热多域仿真软件,分析电力电子变换电路控制系统与功率器件的电、热特性。本文以双边LCC谐振网络无线输电系统中SiC功率MOSFET、逆导型开关(RC-IGBT)为例,基于热传导理论和连续网络热路模型(Cauer模型),给出如何采用PLECS进行功率器件的热建模、损耗分析和温升计算。 |
英文摘要: |
With the help of simulation analysis tools, the correctness of theoretical analysis can be verified, and valuable experience can be provided for the experimental research process. In order to cultivate all-round knowledge talents, electrical engineering students should learn to use electromagnetic thermal multi-domain simulation software to analyze the electrical and thermal characteristics of power electronic conversion circuit control system and power devices. Taking SiC Power MOSFET and reverse conduction switch (RC-IGBT) in double-side LCC resonant network wireless transmission system as an example, based on heat conduction theory and continuous network thermal path model (Cauer model), this paper gives how to use PLECS for thermal modeling, loss analysis and temperature rise calculation of power devices. |
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